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KSB1116GTA Технические параметры
ON Semiconductor KSB1116GTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| hFEMin | 135 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Box (TB) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | -50V | |
| Max Power Dissipation | 750mW | |
| Current Rating | -1A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 120MHz | |
| Base Part Number | KSB1116 | |
| Element Configuration | Single | |
| Power Dissipation | 750mW | |
| Gain Bandwidth Product | 120MHz | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 2V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A | |
| Collector Base Voltage (VCBO) | -60V | |
| Emitter Base Voltage (VEBO) | -6V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
KSB1116GTA Документы
- DatasheetsKSB1116/1116A
- PCN Design/SpecificationCopper Lead Frame 12/Oct/2007
- ReachStatementFairchild-Semiconductor-company-9.pdf
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