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KSB1151YSTSSTU Технические параметры
ON Semiconductor KSB1151YSTSSTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 | |
| Number of Pins | 3Pins | |
| Weight | 758mg | |
| Collector-Emitter Breakdown Voltage | 60V | |
| Number of Elements | 1 Element | |
| hFEMin | 100 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | -60V | |
| Max Power Dissipation | 1.3W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | -5A | |
| Base Part Number | KSB1151 | |
| Element Configuration | Single | |
| Power Dissipation | 1.3W | |
| Transistor Type | PNP | |
| Collector Emitter Voltage (VCEO) | 60V | |
| Max Collector Current | 5A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 2A 1V | |
| Current - Collector Cutoff (Max) | 10μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 200mA, 2A | |
| Collector Base Voltage (VCBO) | -60V | |
| Emitter Base Voltage (VEBO) | -7V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
KSB1151YSTSSTU Документы
- DatasheetsKSB1151
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