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KSB1151YSTU Технические параметры

ON Semiconductor  KSB1151YSTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 761mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 100
Operating Temperature 150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -60V
Max Power Dissipation 1.3W
Current Rating -5A
Base Part Number KSB1151
Element Configuration Single
Power Dissipation 1.3W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 2A 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 2A
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

KSB1151YSTU Документы

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