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KSC1675RBU Технические параметры

ON Semiconductor  KSC1675RBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
hFEMin 40
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Max Power Dissipation 250mW
Current Rating 50mA
Свойство продукта Значение свойства
Frequency 300MHz
Base Part Number KSC1675
Element Configuration Single
Power Dissipation 250mW
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 50mA
RoHS Status RoHS Compliant
Lead Free Lead Free
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KSC1675RBU Документы

KSC1675RBU brand manufacturers: ON Semiconductor, Anli stock, KSC1675RBU reference price.ON Semiconductor. KSC1675RBU parameters, KSC1675RBU Datasheet PDF and pin diagram description download.You can use the KSC1675RBU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSC1675RBU pin diagram and circuit diagram and usage method of function,KSC1675RBU electronics tutorials.You can download from the Anli.