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KSC1730YTA Технические параметры

ON Semiconductor  KSC1730YTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 50mA
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2002
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC1730
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA 10V
Voltage - Collector Emitter Breakdown (Max) 15V
Frequency - Transition 1.1GHz
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KSC1730YTA Документы

KSC1730YTA brand manufacturers: ON Semiconductor, Anli stock, KSC1730YTA reference price.ON Semiconductor. KSC1730YTA parameters, KSC1730YTA Datasheet PDF and pin diagram description download.You can use the KSC1730YTA Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find KSC1730YTA pin diagram and circuit diagram and usage method of function,KSC1730YTA electronics tutorials.You can download from the Anli.