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KSC2001OBU Технические параметры

ON Semiconductor  KSC2001OBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Current-Collector (Ic) (Max) 700mA
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number KSC2001
Power - Max 600mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 70mA, 700mA
Voltage - Collector Emitter Breakdown (Max) 25V
Frequency - Transition 170MHz
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KSC2001OBU Документы

KSC2001OBU brand manufacturers: ON Semiconductor, Anli stock, KSC2001OBU reference price.ON Semiconductor. KSC2001OBU parameters, KSC2001OBU Datasheet PDF and pin diagram description download.You can use the KSC2001OBU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSC2001OBU pin diagram and circuit diagram and usage method of function,KSC2001OBU electronics tutorials.You can download from the Anli.