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KSC2335RTU Технические параметры

ON Semiconductor  KSC2335RTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Weight 1.8g
Collector-Emitter Breakdown Voltage 400V
Current-Collector (Ic) (Max) 7A
Number of Elements 1 Element
hFEMin 20
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 400V
Свойство продукта Значение свойства
Max Power Dissipation 1.5W
Current Rating 7A
Base Part Number KSC2335
Polarity NPN
Element Configuration Single
Power Dissipation 1.5W
Power - Max 1.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 7V
RoHS Status RoHS Compliant
Lead Free Lead Free
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KSC2335RTU Документы

KSC2335RTU brand manufacturers: ON Semiconductor, Anli stock, KSC2335RTU reference price.ON Semiconductor. KSC2335RTU parameters, KSC2335RTU Datasheet PDF and pin diagram description download.You can use the KSC2335RTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSC2335RTU pin diagram and circuit diagram and usage method of function,KSC2335RTU electronics tutorials.You can download from the Anli.