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KSC2682YS Технические параметры

ON Semiconductor  KSC2682YS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126-3
Current-Collector (Ic) (Max) 100mA
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC2682
Power - Max 1.2W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 10mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 180V
Frequency - Transition 200MHz
Просмотр сходства

KSC2682YS Документы

KSC2682YS brand manufacturers: ON Semiconductor, Anli stock, KSC2682YS reference price.ON Semiconductor. KSC2682YS parameters, KSC2682YS Datasheet PDF and pin diagram description download.You can use the KSC2682YS Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSC2682YS pin diagram and circuit diagram and usage method of function,KSC2682YS electronics tutorials.You can download from the Anli.