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KSC2682YSTU Технические параметры

ON Semiconductor  KSC2682YSTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Collector-Emitter Breakdown Voltage 180V
Number of Elements 1 Element
hFEMin 100
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 180V
Max Power Dissipation 1.2W
Current Rating 100mA
Свойство продукта Значение свойства
Frequency 200MHz
Base Part Number KSC2682
Element Configuration Single
Power Dissipation 1.2W
Gain Bandwidth Product 200MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 180V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 10mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
Lead Free Lead Free
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KSC2682YSTU Документы

KSC2682YSTU brand manufacturers: ON Semiconductor, Anli stock, KSC2682YSTU reference price.ON Semiconductor. KSC2682YSTU parameters, KSC2682YSTU Datasheet PDF and pin diagram description download.You can use the KSC2682YSTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSC2682YSTU pin diagram and circuit diagram and usage method of function,KSC2682YSTU electronics tutorials.You can download from the Anli.