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KSC2688YSTU Технические параметры

ON Semiconductor  KSC2688YSTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Collector-Emitter Breakdown Voltage 300V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 300V
Max Power Dissipation 1.25W
Current Rating 200mA
Свойство продукта Значение свойства
Frequency 80MHz
Base Part Number KSC2688
Element Configuration Single
Power Dissipation 1.25W
Gain Bandwidth Product 80MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 10V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 5mA, 50mA
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant
Lead Free Lead Free
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KSC2688YSTU Документы

KSC2688YSTU brand manufacturers: ON Semiconductor, Anli stock, KSC2688YSTU reference price.ON Semiconductor. KSC2688YSTU parameters, KSC2688YSTU Datasheet PDF and pin diagram description download.You can use the KSC2688YSTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSC2688YSTU pin diagram and circuit diagram and usage method of function,KSC2688YSTU electronics tutorials.You can download from the Anli.