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KSC2690AYSTU Технические параметры

ON Semiconductor  KSC2690AYSTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 761mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 160V
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 160V
Max Power Dissipation 1.2W
Свойство продукта Значение свойства
Current Rating 1.2A
Frequency 155MHz
Base Part Number KSC2690A
Element Configuration Single
Power Dissipation 1.2W
Transistor Application AMPLIFIER
Gain Bandwidth Product 155MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 1.2A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 300mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Transition Frequency 155MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 5V
Height 11mm
Length 8mm
Width 3.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

KSC2690AYSTU Документы

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