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KSC3123RMTF Технические параметры

ON Semiconductor  KSC3123RMTF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка ON Semiconductor
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Supplier Device Package SOT-23-3 (TO-236)
Collector-Emitter Breakdown Voltage 20V
Current-Collector (Ic) (Max) 50mA
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Max Power Dissipation 150mW
Current Rating 50mA
Свойство продукта Значение свойства
Frequency 1.4GHz
Polarity NPN
Element Configuration Single
Power Dissipation 150mW
Power - Max 150mW
Gain Bandwidth Product 1.4 GHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Gain 20dB ~ 23dB
Voltage - Collector Emitter Breakdown (Max) 20V
Max Frequency 1.4GHz
Frequency - Transition 1.4GHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 50mA
Noise Figure (dB Typ @ f) 3.8dB ~ 5.5dB @ 200MHz
RoHS Status RoHS Compliant
Lead Free Lead Free

KSC3123RMTF Документы

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