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KSC5338DTU Технические параметры

ON Semiconductor  KSC5338DTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
hFEMin 6
Number of Elements 1 Element
Collector-Emitter Saturation Voltage 350mV
Collector-Emitter Breakdown Voltage 450V
Operating Temperature 150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Voltage - Rated DC 450V
Max Power Dissipation 75W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 5A
Frequency 11MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 75W
Transistor Application SWITCHING
Gain Bandwidth Product 11MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 2A 1V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 1A
Transition Frequency 11MHz
Collector Base Voltage (VCBO) 1kV
Emitter Base Voltage (VEBO) 12V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

KSC5338DTU Документы

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