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KSC838OBU Технические параметры

ON Semiconductor  KSC838OBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 30mA
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC838
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 12V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 30V
Frequency - Transition 250MHz
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KSC838OBU Документы

KSC838OBU brand manufacturers: ON Semiconductor, Anli stock, KSC838OBU reference price.ON Semiconductor. KSC838OBU parameters, KSC838OBU Datasheet PDF and pin diagram description download.You can use the KSC838OBU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSC838OBU pin diagram and circuit diagram and usage method of function,KSC838OBU electronics tutorials.You can download from the Anli.