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KSC839YBU Технические параметры
ON Semiconductor KSC839YBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Number of Elements | 1 Element | |
| hFEMin | 40 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | 30V | |
| Max Power Dissipation | 250mW | |
| Current Rating | 100mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 250MHz | |
| Element Configuration | Single | |
| Power Dissipation | 250mW | |
| Gain Bandwidth Product | 250MHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 30V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 12V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA | |
| Frequency - Transition | 200MHz | |
| Collector Base Voltage (VCBO) | 35V | |
| Emitter Base Voltage (VEBO) | 4V | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
KSC839YBU Документы
- DatasheetsKSC839 KSC839YBU-Fairchild-datasheet-136075.pdf
- ReachStatementFairchild-Semiconductor-company-9.pdf
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