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KSC945CGBU Технические параметры

ON Semiconductor  KSC945CGBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 2 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Weight 179mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 40
Operating Temperature 150°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 50V
Max Power Dissipation 250mW
Свойство продукта Значение свойства
Terminal Position BOTTOM
Current Rating 150mA
Frequency 300MHz
Base Part Number KSC945
Element Configuration Single
Power Dissipation 250mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Transition Frequency 300MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 4.58mm
Length 4.58mm
Width 3.86mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

KSC945CGBU Документы

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