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KSC945GBU Технические параметры

ON Semiconductor  KSC945GBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 150mA
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC945
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 300MHz
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KSC945GBU Документы

KSC945GBU brand manufacturers: ON Semiconductor, Anli stock, KSC945GBU reference price.ON Semiconductor. KSC945GBU parameters, KSC945GBU Datasheet PDF and pin diagram description download.You can use the KSC945GBU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSC945GBU pin diagram and circuit diagram and usage method of function,KSC945GBU electronics tutorials.You can download from the Anli.