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KSD1020GTA Технические параметры

ON Semiconductor  KSD1020GTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Supplier Device Package TO-92S
Current-Collector (Ic) (Max) 700mA
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD1020
Power - Max 350mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 70mA, 700mA
Voltage - Collector Emitter Breakdown (Max) 25V
Frequency - Transition 170MHz
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KSD1020GTA Документы

KSD1020GTA brand manufacturers: ON Semiconductor, Anli stock, KSD1020GTA reference price.ON Semiconductor. KSD1020GTA parameters, KSD1020GTA Datasheet PDF and pin diagram description download.You can use the KSD1020GTA Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD1020GTA pin diagram and circuit diagram and usage method of function,KSD1020GTA electronics tutorials.You can download from the Anli.