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KSD1616AGBU Технические параметры

ON Semiconductor  KSD1616AGBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Weight 179mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 135
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Свойство продукта Значение свойства
Max Power Dissipation 750mW
Terminal Position BOTTOM
Current Rating 1A
Frequency 160MHz
Base Part Number KSD1616
Element Configuration Single
Power Dissipation 750mW
Transistor Application SWITCHING
Gain Bandwidth Product 160MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Transition Frequency 160MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 6V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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KSD1616AGBU Документы

KSD1616AGBU brand manufacturers: ON Semiconductor, Anli stock, KSD1616AGBU reference price.ON Semiconductor. KSD1616AGBU parameters, KSD1616AGBU Datasheet PDF and pin diagram description download.You can use the KSD1616AGBU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD1616AGBU pin diagram and circuit diagram and usage method of function,KSD1616AGBU electronics tutorials.You can download from the Anli.