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KSD2012GTU Технические параметры

ON Semiconductor  KSD2012GTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Weight 2.27g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 100
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 60V
Свойство продукта Значение свойства
Max Power Dissipation 25W
Current Rating 3A
Frequency 3MHz
Element Configuration Single
Power Dissipation 25W
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Transition Frequency 3MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Height 15.87mm
Length 10.16mm
Width 2.54mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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KSD2012GTU Документы

KSD2012GTU brand manufacturers: ON Semiconductor, Anli stock, KSD2012GTU reference price.ON Semiconductor. KSD2012GTU parameters, KSD2012GTU Datasheet PDF and pin diagram description download.You can use the KSD2012GTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD2012GTU pin diagram and circuit diagram and usage method of function,KSD2012GTU electronics tutorials.You can download from the Anli.