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KSD2012YTU Технические параметры

ON Semiconductor  KSD2012YTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 60V
hFEMin 100
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 60V
Max Power Dissipation 25W
Свойство продукта Значение свойства
Current Rating 3A
Element Configuration Single
Gain Bandwidth Product 3MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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KSD2012YTU Документы

KSD2012YTU brand manufacturers: ON Semiconductor, Anli stock, KSD2012YTU reference price.ON Semiconductor. KSD2012YTU parameters, KSD2012YTU Datasheet PDF and pin diagram description download.You can use the KSD2012YTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD2012YTU pin diagram and circuit diagram and usage method of function,KSD2012YTU electronics tutorials.You can download from the Anli.