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KSD2012YYDTU Технические параметры

ON Semiconductor  KSD2012YYDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Current-Collector (Ic) (Max) 3A
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 25W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition 3MHz
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KSD2012YYDTU Документы

KSD2012YYDTU brand manufacturers: ON Semiconductor, Anli stock, KSD2012YYDTU reference price.ON Semiconductor. KSD2012YYDTU parameters, KSD2012YYDTU Datasheet PDF and pin diagram description download.You can use the KSD2012YYDTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD2012YYDTU pin diagram and circuit diagram and usage method of function,KSD2012YYDTU electronics tutorials.You can download from the Anli.