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KSD2058YTU Технические параметры

ON Semiconductor  KSD2058YTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 8
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 60V
Max Power Dissipation 1.5W
Свойство продукта Значение свойства
Current Rating 3A
Frequency 400kHz
Element Configuration Single
Power Dissipation 1.5W
Gain Bandwidth Product 400 kHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 200mA, 2A
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
RoHS Status RoHS Compliant
Lead Free Lead Free
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KSD2058YTU Документы

KSD2058YTU brand manufacturers: ON Semiconductor, Anli stock, KSD2058YTU reference price.ON Semiconductor. KSD2058YTU parameters, KSD2058YTU Datasheet PDF and pin diagram description download.You can use the KSD2058YTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD2058YTU pin diagram and circuit diagram and usage method of function,KSD2058YTU electronics tutorials.You can download from the Anli.