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KSD261CGTA Технические параметры

ON Semiconductor  KSD261CGTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3Pins
Weight 240mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Number of Elements 1 Element
hFEMin 120
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Voltage - Rated DC 20V
Max Power Dissipation 500mW
Terminal Position BOTTOM
Current Rating 500mA
Base Part Number KSD261
Element Configuration Single
Power Dissipation 500mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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KSD261CGTA Документы

KSD261CGTA brand manufacturers: ON Semiconductor, Anli stock, KSD261CGTA reference price.ON Semiconductor. KSD261CGTA parameters, KSD261CGTA Datasheet PDF and pin diagram description download.You can use the KSD261CGTA Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD261CGTA pin diagram and circuit diagram and usage method of function,KSD261CGTA electronics tutorials.You can download from the Anli.