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KSD261CYBU Технические параметры
ON Semiconductor KSD261CYBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 20V | |
| Number of Elements | 1 Element | |
| hFEMin | 120 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | 20V | |
| Max Power Dissipation | 500mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating | 500mA | |
| Base Part Number | KSD261 | |
| Element Configuration | Single | |
| Power Dissipation | 500mW | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 20V | |
| Max Collector Current | 500mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 1V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA | |
| Collector Base Voltage (VCBO) | 40V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
KSD261CYBU Документы
- DatasheetsKSD261 KSD261CYBU-Fairchild-datasheet-131135.pdf
- PCN Design/SpecificationCopper Lead Frame 12/Oct/2007
- ReachStatementFairchild-Semiconductor-company-9.pdf
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