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KSD261CYTA Технические параметры

ON Semiconductor  KSD261CYTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Current-Collector (Ic) (Max) 500mA
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD261
Power - Max 500mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 20V
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KSD261CYTA Документы

KSD261CYTA brand manufacturers: ON Semiconductor, Anli stock, KSD261CYTA reference price.ON Semiconductor. KSD261CYTA parameters, KSD261CYTA Datasheet PDF and pin diagram description download.You can use the KSD261CYTA Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD261CYTA pin diagram and circuit diagram and usage method of function,KSD261CYTA electronics tutorials.You can download from the Anli.