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KSD261GBU Технические параметры

ON Semiconductor  KSD261GBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 20V
Number of Elements 1 Element
hFEMin 120
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 20V
Max Power Dissipation 500mW
Свойство продукта Значение свойства
Current Rating 500mA
Base Part Number KSD261
Element Configuration Single
Power Dissipation 500mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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KSD261GBU Документы

KSD261GBU brand manufacturers: ON Semiconductor, Anli stock, KSD261GBU reference price.ON Semiconductor. KSD261GBU parameters, KSD261GBU Datasheet PDF and pin diagram description download.You can use the KSD261GBU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD261GBU pin diagram and circuit diagram and usage method of function,KSD261GBU electronics tutorials.You can download from the Anli.