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KSD5041QBU Технические параметры

ON Semiconductor  KSD5041QBU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Number of Elements 1 Element
hFEMin 180
Operating Temperature 150°C TJ
Packaging Bulk
Published 2017
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Voltage - Rated DC 20V
Max Power Dissipation 750mW
Свойство продукта Значение свойства
Terminal Position BOTTOM
Current Rating 5A
Frequency 150MHz
Base Part Number KSD5041
Element Configuration Single
Power Dissipation 750mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 230 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 3A
Transition Frequency 150MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

KSD5041QBU Документы

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