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KSD526O Технические параметры
ON Semiconductor KSD526O technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 4A | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | SINGLE | |
| Reach Compliance Code | compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | KSD526 | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE | |
| Power - Max | 30W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 500mA 5V | |
| Current - Collector Cutoff (Max) | 30μA ICBO | |
| JEDEC-95 Code | TO-220AB | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 300mA, 3A | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Transition Frequency | 8MHz | |
| Frequency - Transition | 8MHz |
KSD526O Документы
- DatasheetsKSD526 TO220B03 Pkg Drawing
- PCN Design/SpecificationLead Frame Dimensions 29/Nov/2007
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