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KSD526OTU Технические параметры

ON Semiconductor  KSD526OTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Current-Collector (Ic) (Max) 4A
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD526
Power - Max 30W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 5V
Current - Collector Cutoff (Max) 30μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 80V
Frequency - Transition 8MHz
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KSD526OTU Документы

KSD526OTU brand manufacturers: ON Semiconductor, Anli stock, KSD526OTU reference price.ON Semiconductor. KSD526OTU parameters, KSD526OTU Datasheet PDF and pin diagram description download.You can use the KSD526OTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD526OTU pin diagram and circuit diagram and usage method of function,KSD526OTU electronics tutorials.You can download from the Anli.