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KSD880O Технические параметры

ON Semiconductor  KSD880O technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 2 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Свойство продукта Значение свойства
Max Power Dissipation 30W
Current Rating 3A
Frequency 3MHz
Base Part Number KSD880
Element Configuration Single
Power Dissipation 30W
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Transition Frequency 3MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

KSD880O Документы

KSD880O brand manufacturers: ON Semiconductor, Anli stock, KSD880O reference price.ON Semiconductor. KSD880O parameters, KSD880O Datasheet PDF and pin diagram description download.You can use the KSD880O Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD880O pin diagram and circuit diagram and usage method of function,KSD880O electronics tutorials.You can download from the Anli.