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KSD880YTU Технические параметры

ON Semiconductor  KSD880YTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 4 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 60V
Max Power Dissipation 30W
Свойство продукта Значение свойства
Current Rating 3A
Frequency 3MHz
Base Part Number KSD880
Element Configuration Single
Power Dissipation 30W
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Transition Frequency 3MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
Height 14.2mm
Length 9.9mm
Width 4.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

KSD880YTU Документы

KSD880YTU brand manufacturers: ON Semiconductor, Anli stock, KSD880YTU reference price.ON Semiconductor. KSD880YTU parameters, KSD880YTU Datasheet PDF and pin diagram description download.You can use the KSD880YTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD880YTU pin diagram and circuit diagram and usage method of function,KSD880YTU electronics tutorials.You can download from the Anli.