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KSD882OS Технические параметры
ON Semiconductor KSD882OS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 3A | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | KSD882 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Power - Max | 1W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A 2V | |
| Current - Collector Cutoff (Max) | 1μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A | |
| Voltage - Collector Emitter Breakdown (Max) | 30V | |
| Transition Frequency | 90MHz | |
| Frequency - Transition | 90MHz | |
| RoHS Status | RoHS Compliant |
KSD882OS Документы
- DatasheetsKSD882
Индекс :
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