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KSD882YS Технические параметры

ON Semiconductor  KSD882YS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Factory Lead Time 2 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3Pins
Weight 761mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 30V
Number of Elements 1 Element
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Voltage - Rated DC 30V
Max Power Dissipation 1W
Current Rating 3A
Frequency 90MHz
Base Part Number KSD882
Element Configuration Single
Power Dissipation 1W
Case Connection ISOLATED
Transistor Application AMPLIFIER
Gain Bandwidth Product 90MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 1A 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Transition Frequency 90MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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KSD882YS Документы

KSD882YS brand manufacturers: ON Semiconductor, Anli stock, KSD882YS reference price.ON Semiconductor. KSD882YS parameters, KSD882YS Datasheet PDF and pin diagram description download.You can use the KSD882YS Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSD882YS pin diagram and circuit diagram and usage method of function,KSD882YS electronics tutorials.You can download from the Anli.