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KSE13003H3ASTU Технические параметры
ON Semiconductor KSE13003H3ASTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 | |
| Number of Pins | 3Pins | |
| Weight | 761mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 400V | |
| Number of Elements | 1 Element | |
| hFEMin | 8 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Max Power Dissipation | 20W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Frequency | 4MHz | |
| Base Part Number | KSE13003 | |
| Element Configuration | Single | |
| Power Dissipation | 20W | |
| Transistor Application | SWITCHING | |
| Gain Bandwidth Product | 4MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 400V | |
| Max Collector Current | 1.5A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 19 @ 500mA 2V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 500mA, 1.5A | |
| Transition Frequency | 4MHz | |
| Collector Base Voltage (VCBO) | 700V | |
| Emitter Base Voltage (VEBO) | 9V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
KSE13003H3ASTU Документы
- DatasheetsKSE13003
- ReachStatementFairchild-Semiconductor-company-9.pdf
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