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KSE13003TH1ATU Технические параметры

ON Semiconductor  KSE13003TH1ATU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 2 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 400V
Number of Elements 1 Element
hFEMin 8
Operating Temperature 150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 400V
Свойство продукта Значение свойства
Max Power Dissipation 30W
Current Rating 1.5A
Frequency 4MHz
Base Part Number KSE13003
Element Configuration Single
Power Dissipation 30W
Power - Max 20W
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 9 @ 500mA 2V
Vce Saturation (Max) @ Ib, Ic 3V @ 500mA, 1.5A
Transition Frequency 4MHz
Collector Base Voltage (VCBO) 700V
Emitter Base Voltage (VEBO) 9V
Height 14.2mm
Length 9.9mm
Width 4.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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KSE13003TH1ATU Документы

KSE13003TH1ATU brand manufacturers: ON Semiconductor, Anli stock, KSE13003TH1ATU reference price.ON Semiconductor. KSE13003TH1ATU parameters, KSE13003TH1ATU Datasheet PDF and pin diagram description download.You can use the KSE13003TH1ATU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSE13003TH1ATU pin diagram and circuit diagram and usage method of function,KSE13003TH1ATU electronics tutorials.You can download from the Anli.