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KSE45H11 Технические параметры

ON Semiconductor  KSE45H11 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Factory Lead Time 2 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -80V
Свойство продукта Значение свойства
Max Power Dissipation 1.67W
Current Rating -10A
Frequency 40MHz
Base Part Number KSE45H
Element Configuration Single
Power Dissipation 1.67W
Transistor Application SWITCHING
Gain Bandwidth Product 40MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 1V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transition Frequency 40MHz
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
VCEsat-Max 1 V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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KSE45H11 Документы

KSE45H11 brand manufacturers: ON Semiconductor, Anli stock, KSE45H11 reference price.ON Semiconductor. KSE45H11 parameters, KSE45H11 Datasheet PDF and pin diagram description download.You can use the KSE45H11 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSE45H11 pin diagram and circuit diagram and usage method of function,KSE45H11 electronics tutorials.You can download from the Anli.