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KSE45H8TU Технические параметры

ON Semiconductor  KSE45H8TU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 1.8g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Voltage - Rated DC -60V
Max Power Dissipation 1.67W
Current Rating -8A
Frequency 40MHz
Base Part Number KSE45H
Element Configuration Single
Power Dissipation 1.67W
Transistor Application SWITCHING
Gain Bandwidth Product 40MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 2A 1V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Transition Frequency 40MHz
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

KSE45H8TU Документы

KSE45H8TU brand manufacturers: ON Semiconductor, Anli stock, KSE45H8TU reference price.ON Semiconductor. KSE45H8TU parameters, KSE45H8TU Datasheet PDF and pin diagram description download.You can use the KSE45H8TU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSE45H8TU pin diagram and circuit diagram and usage method of function,KSE45H8TU electronics tutorials.You can download from the Anli.