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KSE800S Технические параметры
ON Semiconductor KSE800S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 4A | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| Power - Max | 40W | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN - Darlington | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A 3V | |
| Current - Collector Cutoff (Max) | 100μA | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Power Dissipation-Max (Abs) | 40W |
KSE800S Документы
- DatasheetsKSE800-KSE803
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