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KSE803S Технические параметры

ON Semiconductor  KSE803S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126-3
Current-Collector (Ic) (Max) 4A
Operating Temperature 150°C TJ
Packaging Bulk
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 40W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Voltage - Collector Emitter Breakdown (Max) 80V
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KSE803S Документы

KSE803S brand manufacturers: ON Semiconductor, Anli stock, KSE803S reference price.ON Semiconductor. KSE803S parameters, KSE803S Datasheet PDF and pin diagram description download.You can use the KSE803S Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSE803S pin diagram and circuit diagram and usage method of function,KSE803S electronics tutorials.You can download from the Anli.