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KSH112GTM Технические параметры
ON Semiconductor KSH112GTM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ON Semiconductor | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Collector-Emitter Breakdown Voltage | 100V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | 100V | |
| Max Power Dissipation | 1.75W | |
| Current Rating | 2A | |
| Base Part Number | KSH112 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Polarity | NPN | |
| Element Configuration | Single | |
| Power Dissipation | 20W | |
| Transistor Type | NPN - Darlington | |
| Collector Emitter Voltage (VCEO) | 100V | |
| Max Collector Current | 2A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A 3V | |
| Current - Collector Cutoff (Max) | 20μA | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | |
| Frequency - Transition | 25MHz | |
| Collector Base Voltage (VCBO) | 100V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Continuous Collector Current | 2A | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
KSH112GTM Документы
- DatasheetsKSH112
- ReachStatementFairchild-Semiconductor-company-9.pdf
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