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KSH112ITU Технические параметры

ON Semiconductor  KSH112ITU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Current-Collector (Ic) (Max) 2A
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSH112
Power - Max 1.75W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A 3V
Current - Collector Cutoff (Max) 20μA
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Voltage - Collector Emitter Breakdown (Max) 100V
Frequency - Transition 25MHz
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KSH112ITU Документы

KSH112ITU brand manufacturers: ON Semiconductor, Anli stock, KSH112ITU reference price.ON Semiconductor. KSH112ITU parameters, KSH112ITU Datasheet PDF and pin diagram description download.You can use the KSH112ITU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSH112ITU pin diagram and circuit diagram and usage method of function,KSH112ITU electronics tutorials.You can download from the Anli.