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KSP10BU Технические параметры
ON Semiconductor KSP10BU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ON Semiconductor | |
| Lifecycle Status | ACTIVE (Last Updated: 11 hours ago) | |
| Factory Lead Time | 6 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Number of Pins | 3Pins | |
| Weight | 179mg | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 25V | |
| Number of Elements | 1 Element | |
| hFEMin | 60 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| Published | 2002 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Voltage - Rated DC | 25V | |
| Max Power Dissipation | 350mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | BOTTOM | |
| Current Rating | 100mA | |
| Frequency | 650MHz | |
| Base Part Number | KSP10 | |
| Element Configuration | Single | |
| Power Dissipation | 350mW | |
| Gain Bandwidth Product | 650MHz | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 25V | |
| Max Collector Current | 50mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA 10V | |
| Transition Frequency | 650MHz | |
| Collector Base Voltage (VCBO) | 30V | |
| Emitter Base Voltage (VEBO) | 3V | |
| Collector-Base Capacitance-Max | 0.7pF | |
| Height | 4.58mm | |
| Length | 4.58mm | |
| Width | 3.86mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
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