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KSP45BU Технические параметры

ON Semiconductor  KSP45BU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка ON Semiconductor
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3Pins
Weight 178.2mg
Collector-Emitter Breakdown Voltage 350V
Number of Elements 1 Element
hFEMin 50
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 350V
Max Power Dissipation 625mW
Свойство продукта Значение свойства
Current Rating 300mA
Base Part Number KSP45
Element Configuration Single
Power Dissipation 625mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Просмотр сходства

KSP45BU Документы

KSP45BU brand manufacturers: ON Semiconductor, Anli stock, KSP45BU reference price.ON Semiconductor. KSP45BU parameters, KSP45BU Datasheet PDF and pin diagram description download.You can use the KSP45BU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSP45BU pin diagram and circuit diagram and usage method of function,KSP45BU electronics tutorials.You can download from the Anli.