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ON Semiconductor KST10MTF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Bipolar (BJT) - RF | |
Марка | ON Semiconductor | |
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) | |
Factory Lead Time | 13 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Number of Pins | 3Pins | |
Weight | 30mg | |
Transistor Element Material | SILICON | |
Collector-Emitter Breakdown Voltage | 25V | |
Number of Elements | 1 Element | |
hFEMin | 60 | |
Packaging | Tape & Reel (TR) | |
Published | 2002 | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Tin (Sn) | |
Max Operating Temperature | 150°C | |
Voltage - Rated DC | 25V | |
Max Power Dissipation | 350mW | |
Terminal Position | DUAL |
Свойство продукта | Значение свойства | |
---|---|---|
Terminal Form | GULL WING | |
Current Rating | 4mA | |
Frequency | 650MHz | |
Base Part Number | KST10 | |
Element Configuration | Single | |
Power Dissipation | 350mW | |
Output Power | 350mW | |
Gain Bandwidth Product | 650MHz | |
Polarity/Channel Type | NPN | |
Transistor Type | NPN | |
Collector Emitter Voltage (VCEO) | 25V | |
Max Collector Current | 50mA | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA 10V | |
Transition Frequency | 650MHz | |
Max Breakdown Voltage | 25V | |
Collector Base Voltage (VCBO) | 30V | |
Emitter Base Voltage (VEBO) | 3V | |
Collector-Base Capacitance-Max | 0.7pF | |
Height | 960μm | |
Length | 2.9mm | |
Width | 1.3mm | |
REACH SVHC | No SVHC | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |