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MBD110DWT1G Технические параметры

ON Semiconductor  MBD110DWT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка ON Semiconductor
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 120mW
Operating Temperature -55°C~125°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Voltage - Rated DC 7V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 90mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Qualification Status Not Qualified
Element Configuration Dual
Diode Type Schottky - 2 Independent
Max Reverse Leakage Current 250nA
Rep Pk Reverse Voltage-Max 7V
Capacitance @ Vr, F 1pF @ 0V 1MHz
Frequency Band ULTRA HIGH FREQUENCY
Diode Capacitance-Max 1pF
RoHS Status RoHS Compliant
Lead Free Lead Free

MBD110DWT1G Документы

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