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MBD770DWT1G Технические параметры

ON Semiconductor  MBD770DWT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 22 hours ago)
Factory Lead Time 2 Weeks
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Power Dissipation (Max) 380mW
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 70V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 90mA
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number MBD770
Pin Count 6
Reference Standard AEC-Q101
Max Current Rating 100mA
Element Configuration Dual
Diode Type Schottky - 2 Independent
Power Dissipation 120mW
Forward Current 100mA
Max Reverse Leakage Current 200nA
Halogen Free Halogen Free
Forward Voltage 1V
Peak Reverse Current 200nA
Max Repetitive Reverse Voltage (Vrrm) 70V
Capacitance @ Vr, F 1pF @ 20V 1MHz
Max Forward Surge Current (Ifsm) 1A
Frequency Band ULTRA HIGH FREQUENCY
Diode Capacitance-Max 1pF
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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MBD770DWT1G Документы

MBD770DWT1G brand manufacturers: ON Semiconductor, Anli stock, MBD770DWT1G reference price.ON Semiconductor. MBD770DWT1G parameters, MBD770DWT1G Datasheet PDF and pin diagram description download.You can use the MBD770DWT1G Diodes - RF, DSP Datesheet PDF, find MBD770DWT1G pin diagram and circuit diagram and usage method of function,MBD770DWT1G electronics tutorials.You can download from the Anli.