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MBR10100G Технические параметры

ON Semiconductor  MBR10100G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 11 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-2
Number of Pins 2Pins
Supplier Device Package TO-220-2
Weight 4.535924g
Breakdown Voltage / V 100V
Packaging Tube
Series SWITCHMODE™
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Voltage - Rated DC 100V
Current Rating 10A
Base Part Number MBR10100
Polarity Standard
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Свойство продукта Значение свойства
Diode Type Schottky
Current - Reverse Leakage @ Vr 100μA @ 100V
Output Current 10A
Voltage - Forward (Vf) (Max) @ If 800mV @ 10A
Forward Current 10A
Max Reverse Leakage Current 100μA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 150A
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 10A
Forward Voltage 800mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 10A
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Peak Non-Repetitive Surge Current 150A
Max Forward Surge Current (Ifsm) 150A
Height 15.748mm
Length 10.287mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR10100G Документы

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