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MBR1060G Технические параметры

ON Semiconductor  MBR1060G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 7 Weeks
Mounting Type Through Hole
Package / Case TO-220-2
Number of Pins 2Pins
Supplier Device Package TO-220-2
Weight 4.535924g
Breakdown Voltage / V 60V
Packaging Tube
Series SWITCHMODE™
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Voltage - Rated DC 60V
Current Rating 10A
Base Part Number MBR1060
Polarity Standard
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Свойство продукта Значение свойства
Current - Reverse Leakage @ Vr 100μA @ 60V
Output Current 10A
Voltage - Forward (Vf) (Max) @ If 800mV @ 10A
Forward Current 10A
Max Reverse Leakage Current 100μA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 150A
Voltage - DC Reverse (Vr) (Max) 60V
Current - Average Rectified (Io) 10A
Forward Voltage 800mV
Max Reverse Voltage (DC) 60V
Average Rectified Current 10A
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 60V
Peak Non-Repetitive Surge Current 150A
Max Forward Surge Current (Ifsm) 150A
Height 9.27mm
Length 10.29mm
Width 4.82mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR1060G Документы

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