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MBR120ESFT3G Технические параметры

ON Semiconductor  MBR120ESFT3G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка ON Semiconductor
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case SOD-123F
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 20V
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBR120
Pin Count 2
Polarity Standard
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 10μA @ 20V
Output Current 1A
Voltage - Forward (Vf) (Max) @ If 530mV @ 1A
Forward Current 1A
Max Reverse Leakage Current 10μA
Operating Temperature - Junction -65°C~150°C
Max Surge Current 40A
Halogen Free Halogen Free
Forward Voltage 595mV
Max Reverse Voltage (DC) 20V
Average Rectified Current 1A
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 20V
Peak Non-Repetitive Surge Current 40A
Max Forward Surge Current (Ifsm) 40A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MBR120ESFT3G Документы

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